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HomeStructureCorrespondent members of ANASVladimir Ismail oglu Tahirov


Place of Birth: Urud village, Sisian district,  Armenian   Republic.
Date of Birth: 05 April, 1932
Education: Agdam Teacher's Institute, faculty of physics and mathematics; Baki State University, faculty of physics
Scientific degree: Doctor of Physics and Mathematics
Title: Professor
Speciality code and title for doctoral dissertation:

01.04.10 – Semiconducting and dielectric physics
Date of Election as a correspondent member and speciality:

2001, Physics
Total number of scientific publications:

270
Number of scientific publications printed abroad :

150
Number of patents and certificates of authorship:

2 certificates of authorship
Main scientific achievements:

Are connected with investigation of great amounts of semiconductors such as Ge, Ge-Si, GaSb, BiSb, Te, Te-Se, A3B5 type compounds etc. and with finding new substances having unusual properties. He has discovered a new class of triple semiconductor compounds (over 45 compounds), a detailed investigation all of these materials allowed him to discover mechanisms of absorption edge formation, photo- and cathode-lumination, homo- and hetero-junctions with varies contacts, non-radioactive recombination, free carrier scattering, impurity interaction in these materials. He has developed a number of new methods such as a new method of single crystal growth of solid alloys with heavy segregation, a new method of growing single crystals of peritectic compounds containing volatile components; a method of determination of impurity levels in semiconductors; an express method of determining of solid state thermal capacity and so on.
Prepared:
of candidates: 30
of doctors: 7
Titles of main five scientific publications:

  1. "Ge-Si semiconductors alloys", Baki, Elm, 1983, 208 p. (in Russian)

  2. "The new A3IB5IIIC9VI type semiconductor class of triple compounds", Baki, Baki State University publication house, 2001, 304 p.

  3. "On the defining of impurity levels in semiconductors", FTP, 4, no. 11, 1970, pp. 2182-2184.

  4. "The mechanism of formation of defects in GaSb", Elektronnaya tekhnika, 1971, vol. 14, no. 7, pp. 93-96.

  5. "The IR spectrum of reflection of the Cu3Ju5S9 layered single crystals", Phys. Stat. Solidi, 144, no. 1, K73-K76, 1987.
Educational activity: 25 years
Position: Professor
Place of work and its address: Baki State University, 23, Z. Xalilov str., Baki-370073, Azerbaijan Republic
Home phone: (994 12) 4301470
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